Customizing back end of the line interconnects

Details Customizing back end of the line interconnects Customizing back end of the line interconnects

2007-11-27

2007-11-27

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Rendering selected devices operable or inoperable

C438S585000, C257S209000, C257SE21579

Reexamination Certificate

active

10835953

ABSTRACT:
Custom connections between pairs of copper wires in a last damascene wiring level are effected by creating openings in an overlying insulating layer which span a distance between portions of the two wires, then filling the openings with aluminum. The openings can be created (or completed) by a second, maskless UV laser exposure of positive photoresist which is used for patterning the insulating layer. If an opening is not created, an aluminum connecting shape overlying the insulating layer will not effect a connection between the two wires. Similar results can be achieved by laser exposure of a resist used to pattern the aluminum layer, thereby causing breaks in connecting shape when it is desired not to have a connection.

REFERENCES:
patent: 4294913 (1981-10-01), Moraw et al.
patent: 5753417 (1998-05-01), Ulrich
patent: 6589881 (2003-07-01), Huang et al.
patent: 2003/0003703 (2003-01-01), Barth et al.
patent: 2004/0180295 (2004-09-01), Chang

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