Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1996-08-21
1998-08-11
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257773, 438131, H01L 2900
Patent
active
057930953
ABSTRACT:
An integrated circuit includes a substrate with doped regions, a patterned polysilicon layer defining contacts and local interconnects, a submetal dielectric, a two-metal layer metal interconnect structure with an intermetal dielectric layer, and a passivation layer. Like the dielectric layers, the passivation layer is optically transparent, thick, and planarized. Because of this, laser energy can be directed through the passivation layer to fuse two conductors of the top metal layer without delaminating the passivation layer. In addition, laser energy is directed through the passivation layer and the intermetal dielectric to fuse pairs of conductors in the lower metal layer. Thus, the present invention provides for reliable convenient circuit modification without disturbing dielectric and exposing metal features to moisture and other contaminants.
REFERENCES:
patent: 3766308 (1973-10-01), Loro
patent: 4839700 (1989-06-01), Ramesham et al.
patent: 5373379 (1994-12-01), Nakai
patent: 5512775 (1996-04-01), Cho
Anderson Clifton L.
Jackson Jerome
Kelley Nathan K.
VLSI Technology Inc.
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