CuSiN/SiN diffusion barrier for copper in integrated-circuit...

Details CuSiN/SiN diffusion barrier for copper in integrated-circuit... CuSiN/SiN diffusion barrier for copper in integrated-circuit...

2007-08-29

2011-12-06

Parekh, Nitin (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S762000, C257S758000, C257S760000, C257SE23145, C257SE21268, C438S118000, C438S622000, C438S624000, C438S687000

Reexamination Certificate

active

08072075

ABSTRACT:
The present invention relates to an integrated-circuit device that has at least one Copper-containing feature in a dielectric layer, and a diffusion-barrier layer stack arranged between the feature and the dielectric layer. The integrated-circuit device of the invention has a diffusion-barrier layer stack, which comprises, in a direction from the Copper-containing feature to the dielectric layer, a CuSiN layer and a SiN layer. This layer combination provides an efficient barrier for suppressing Copper diffusion from the feature into the dielectric layer. Furthermore, a CuSiN/SiN layer sequence provides an improved adhesion between the layers of the diffusion-barrier layer stack and the dielectric layer, and thus improves the electromigration performance of the integrated-circuit device during operation. Therefore, the reliability of device operation and the lifetime of the integrate-circuit device are improved in comparison with prior-art devices. The invention further relates to a method for fabricating such an integrated-circuit device.

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S. Chhun, L.G. Gosset, N. Casanova, D. Ney, D. Delille, C. Trouiller, M. Hopstaken, P. Chausse, M. Gregoire, B. Gautier, J.-C. Dupuy, J. Torres; Impact of introducing CuSiN self-aligned barriers in advanced copper interconnects; Elsevier B.V.; 2005; p. 587-593; Microelectronic Engineering.

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