Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Reexamination Certificate
2008-09-12
2010-06-15
Nguyen, Ha Tran T (Department: 2829)
Electricity: measuring and testing
Fault detecting in electric circuits and of electric components
Of individual circuit component or element
C324S765010
Reexamination Certificate
active
07737717
ABSTRACT:
A method for evaluating gate dielectrics (100) includes providing a test structure (101). The test structure includes a gate stack that includes a gate electrode on a gate dielectric on a substrate, and at least one diffusion region diffused in the substrate including a portion below the gate stack and a portion beyond the gate stack. Pre-stress off-state I-V testing (102) is performed on the test structure to obtain pre-stress I-V test data, wherein the pre-stress off-state I-V testing includes a first measurement involving the gate electrode, the substrate and the diffusion region, a second measurement involving the gate electrode and the substrate with the diffusion region floating, and a third measurement involving the gate electrode and the diffusion region with the substrate floating. The test structure is then stressed (103) including electrically stressing for a time (t). Following the stressing, post-stress I-V testing is performed (104) wherein the first, second and third measurements are repeated to obtain post-stress I-V test data. The gate dielectric is evaluated (105) from the pre-stress and post-stress I-V test data.
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Krishnan Anand T.
Nicollian Paul Edward
Reddy Vijay K.
Brady III Wade J.
Garner Jacqueline J.
Nguyen Ha Tran T
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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