Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Utilizing three or more electrode solid-state device
Patent
1997-02-06
1998-09-22
Callahan, Timothy P.
Miscellaneous active electrical nonlinear devices, circuits, and
Gating
Utilizing three or more electrode solid-state device
327431, 327434, 327437, 327542, 327543, H03K 1768
Patent
active
058120114
ABSTRACT:
A current switching circuit in an integrated semiconductor circuit includes a load connected to a positive power supply; a first pnp bipolar transistor having a collector electrode connected to the load, and a base electrode connected to a DC bias source and an emitter electrode; and a first n channel MOS transistor having a drain electrode connected to the emitter electrode of the first npn bipolar transistor, a source electrode connected to the ground, and a gate electrode connected to an input terminal, the first MOS transistor turning on and off in response to a voltage applied to the input terminal.
REFERENCES:
patent: 3708699 (1973-01-01), Frei et al.
patent: 4177392 (1979-12-01), Harferl
patent: 4684880 (1987-08-01), Chan
patent: 5038053 (1991-08-01), Djenguerian et al.
patent: 5173625 (1992-12-01), Ueda et al.
patent: 5296765 (1994-03-01), Williams et al.
patent: 5374857 (1994-12-01), Carobolante
patent: 5381083 (1995-01-01), Inamori et al.
patent: 5557194 (1996-09-01), Kato
Hayashi Yutaka
Umeyama Takehiko
Callahan Timothy P.
Luu An T.
Mitsubishi Denki & Kabushiki Kaisha
LandOfFree
Current switching circuit formed in an integrated semiconductor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Current switching circuit formed in an integrated semiconductor , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Current switching circuit formed in an integrated semiconductor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1625970