Static information storage and retrieval – Powering – Data preservation
Reexamination Certificate
2007-06-05
2007-06-05
Dinh, Son (Department: 2824)
Static information storage and retrieval
Powering
Data preservation
C365S226000, C365S227000, C365S228000, C365S189060
Reexamination Certificate
active
10827785
ABSTRACT:
A memory device (200) can include a memory cell block (202), a standby current source (206), an active current source (208), and a clamping device (212). In a standby mode, a standby current source (206) can provide constant standby current ISTBYto memory cell block (202) via block supply node (204). In an active mode, active current source (208) can provide current to accommodate current necessary for active operations (e.g., accessing the memory cell block). A clamping circuit (212) can provide additional current in the event a block supply node (204) potential VCCX collapses due to the presence of micro-defects. In addition, compensation for process variation can be achieved by a self regulating well (454) to source (404) back bias that can modulate the threshold voltage of p-channel transistors of memory cells within the well (454), reducing overall leakage.
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Kothandaraman Badrinarayanan
Mann Eric
Rodgers Thurman J.
Cypress Semiconductor Corporation
Dinh Son
Haverstock & Owens LLP
Wendler Eric J.
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