Current sensing technique using MOS transistor scaling with matc

Details Current sensing technique using MOS transistor scaling with matc Current sensing technique using MOS transistor scaling with matc

1995-07-19

1998-05-26

Wong, Peter S.

Electricity: power supply or regulation systems

Output level responsive

Using a three or more terminal semiconductive device as the...

323285, 323315, G05F 1565, G05F 1575

Patent

active

057571740

ABSTRACT:
A technique for sensing current that employs an internal current sensing resistor. Two current sources of small and equal magnitude pull currents from two identical PNP transistors. Two PMOS transistors supply current to the PNP transistors. The PMOS transistors are scaled so the transistor on the output side of the circuit has an aspect ratio much greater than that of the transistor on the sensing side of the circuit. The result is that the currents through the PMOS transistors are proportional to each other and the current on the sensing side is much smaller than the current on the output side. The output current is the difference between the current through the PMOS transistor with the greater aspect ratio and the current through one of the small current sources. The sensing current, which passes through the internal sensing resistor, is the difference between the current flowing through the PMOS transistor with the lesser aspect ratio and the current flowing through the other small current source. The result is that the current flowing through the sensing resistor is substantially proportional to and much smaller than the current flowing through the load. The dual of this circuit, employing NMOS scaled transistors and matched NPN transistors achieves the same effect.

REFERENCES:
patent: 4311954 (1982-01-01), Capel
patent: 4465967 (1984-08-01), Tokunaga et al.
patent: 4529927 (1985-07-01), O'Sullivan et al.
patent: 4661766 (1987-04-01), Hoffman et al.
patent: 4672303 (1987-06-01), Newton
patent: 4820968 (1989-04-01), Wrathall
patent: 4845420 (1989-07-01), Oshizawa et al.
patent: 4885477 (1989-12-01), Bird et al.
patent: 4929882 (1990-05-01), Szepesi
patent: 4940929 (1990-07-01), Williams
patent: 4941080 (1990-07-01), Sieborger
patent: 4947309 (1990-08-01), Jonsson
patent: 5008586 (1991-04-01), Miyazaki et al.
patent: 5014020 (1991-05-01), Hayashi et al.
patent: 5043655 (1991-08-01), Anholm Jr, et al.
patent: 5138249 (1992-08-01), Capel
patent: 5146152 (1992-09-01), Jin et al.
patent: 5262713 (1993-11-01), Agiman
patent: 5365161 (1994-11-01), Inoue et al.
patent: 5414341 (1995-05-01), Brown
patent: 5450000 (1995-09-01), Olsen
patent: 5479089 (1995-12-01), Lee
patent: 5481178 (1996-01-01), Wilcox et al.
patent: 5502370 (1996-03-01), Hall et al.
patent: 5519310 (1996-05-01), Bartlett
patent: 5532577 (1996-07-01), Doluca
patent: 5552695 (1996-09-01), Schwartz
patent: 5592071 (1997-01-01), Brown
patent: 5610502 (1997-03-01), Tallant, II et al.
patent: 5617306 (1997-04-01), Lai et al.
patent: 5627460 (1997-05-01), Bazinet et al.

Affiliated with

Also associated with

Rating

Current sensing technique using MOS transistor scaling with matc does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Current sensing technique using MOS transistor scaling with matc, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Current sensing technique using MOS transistor scaling with matc will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1965679