Current-sensing circuit for an IC power semiconductor device

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307270, 307355, 307350, 307570, H03K 1712

Patent

active

050813790

ABSTRACT:
A circuit for measuring the current through a power transistor comprising at least two groups of parallel-switched transistors. A first large group of transistors carries the power current and a second group of transistors carries a current to be measured which is proportional to the power current when the base-emitter voltage or the gate-source voltage (in the case of bipolar or field effect transistors) of all the transistors in the groups is the same. The voltage difference between the parallel-switched emitters or sources of the two groups is measured by means of a differential amplifier and the emitter or source voltage of the first group is impressed on the emitters or sources of the second group by means of a control transistor driven by the differential amplifier. Except in extreme cases (for example, a short-circuit) the current to be measured through the second group follows the power current through the first group on a proportional basis.

REFERENCES:
patent: 4064506 (1977-12-01), Cartwright, Jr.
patent: 4427903 (1984-01-01), Sugimoto
patent: 4477782 (1984-10-01), Swanson
patent: 4573021 (1986-02-01), Widlar
patent: 4675561 (1987-06-01), Bowers

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