Current-perpendicular-to-plane-type magnetoresistive device,...

Stock material or miscellaneous articles – All metal or with adjacent metals – Having magnetic properties – or preformed fiber orientation...

Reexamination Certificate

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C428S669000, C428S676000, C428S681000, C428S336000, C428S692100, C360S324110, C360S324120, C360S125330

Reexamination Certificate

active

06905780

ABSTRACT:
A magnetoresistive device includes a magnetization pinned layer, a magnetization free layer, a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer, and electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer. At least one of the magnetization pinned layer and the magnetization free layer is substantially formed of a binary or ternary alloy represented by the formula FeaCobNic(where a+b+c=100 at %, and a≦75 at %, b≦75 at %, and c≦63 at %), or formed of an alloy having a body-centered cubic crystal structure.

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L. Villa, et al., Journal of Applied Physics, vol. 87, No. 12, pp. 8610-8614, Current Perpendicular Magnetoresistances of NiFeCo and NiFe “Permalloys”, Jun. 15, 2000.
Machine Translation of JP 2001-094173-A.

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