Current-perpendicular-to-plane magnetoresistance effect...

Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head

Reexamination Certificate

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Reexamination Certificate

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07405906

ABSTRACT:
A magnetoresistance effect element of the dual spin valve type using a current-perpendicular-to-the-plane (CPP) system where a sensing current flows perpendicular to the stacked faces of a plurality of conductive layers, the magnetoresistance effect element comprises a first unit which includes a free layer and a first pinning layer, a second unit which includes the free layer shared with the first unit and a second pinning layer, a first current control layer which is provided in the first unit and limits the flow quantity of the sensing current, and a second current control layer which is provided in the second unit and limits the flow quantity of the sensing current.

REFERENCES:
patent: 5668688 (1997-09-01), Dykes et al.
patent: 6069820 (2000-05-01), Inomata et al.
patent: 6178074 (2001-01-01), Gill
patent: 6560077 (2003-05-01), Fujiwara et al.
patent: 6686068 (2004-02-01), Carey et al.
patent: 6707649 (2004-03-01), Hasegawa et al.
patent: 6781798 (2004-08-01), Gill
patent: 6781801 (2004-08-01), Heinonen et al.
patent: 6822838 (2004-11-01), Lin et al.
patent: 6937447 (2005-08-01), Okuno et al.
patent: 7002781 (2006-02-01), Sugawara
patent: 2002/0172840 (2002-11-01), Terada et al.
patent: 2003/0062981 (2003-04-01), Hosomi et al.
patent: 2003/0133234 (2003-07-01), Furukawa et al.
patent: 2004/0042127 (2004-03-01), Hoshiya et al.
patent: 2004/0201929 (2004-10-01), Hashimoto et al.
patent: 2005/0111144 (2005-05-01), Sbiaa
patent: 0 801 380 (1997-10-01), None
patent: 1 324 316 (2003-07-01), None
patent: 10-55512 (1998-02-01), None
patent: 2002-208744 (2002-07-01), None
Austrian Search Report dated Apr. 22, 2005 for Singapore Appln. No. 200404491-3.

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