Current perpendicular to plane GMR and TMR sensors with...

Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

08068315

ABSTRACT:
A magnetoresisive sensor having a thin seed layer that provides an exceptionally smooth interface between layers of the sensor stack. The exceptionally smooth interface provided by the seed layer reduces interlayer exchange coupling allowing the non-magnetic spacer layer (or barrier layer) to be very thin. The seed layer includes a thin layer of Ru and a thin layer of Si which intermix to form a homogeneous, amorphous thin seed layer of Ru-silicide.

REFERENCES:
patent: 5341118 (1994-08-01), Parkin et al.
patent: 6624985 (2003-09-01), Freitag et al.
patent: 6741429 (2004-05-01), Baglin et al.
patent: 6891703 (2005-05-01), Hasegawa
patent: 6914257 (2005-07-01), Shimura et al.
patent: 7268982 (2007-09-01), Gill
patent: 7333302 (2008-02-01), Lee et al.
patent: 7333306 (2008-02-01), Zhao et al.
patent: 7363699 (2008-04-01), Carey et al.
patent: 7369373 (2008-05-01), Gill
patent: 7408749 (2008-08-01), Gill
patent: 7457085 (2008-11-01), Carey et al.
patent: 7463459 (2008-12-01), Ding et al.
patent: 7529066 (2009-05-01), Carey et al.
patent: 7788796 (2010-09-01), Hsiao et al.
patent: 2003/0203189 (2003-10-01), Futamoto et al.
patent: 2005/0168887 (2005-08-01), Yuasa et al.
patent: 2005/0243476 (2005-11-01), Gill
patent: 2006/0067017 (2006-03-01), Yuasa et al.
patent: 2006/0152863 (2006-07-01), Freitag et al.
patent: 2006/0164765 (2006-07-01), Li et al.
patent: 2006/0165881 (2006-07-01), Li et al.
patent: 2006/0168794 (2006-08-01), Contreras et al.
patent: 2002289947 (2002-10-01), None
patent: 2003031866 (2003-01-01), None
Mun et al., “X-ray absorption spectroscopy studies on magnetic tunnel junctions with AIO and AIN tunnel barriers” Journal of Applied Physics 99, 2006.
Wang et al., “Structural characterization on base/collector interfaces for magnetic tunnel transistors grown on Si(001)” Journal of Applied Physics 97, 2005.
Parks et al., “Interfacial roughness effects on interlayer coupling in spin valves grown on different seed layers” Journal of Applied Physics vol. 87, No. 6, Mar. 15, 2000.
“IrMn Bottom Spin Valves With Improved Signal Using Si Underlayers” IP.COM Disclosure 000013487D, Jun. 18, 2003.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Current perpendicular to plane GMR and TMR sensors with... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Current perpendicular to plane GMR and TMR sensors with..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Current perpendicular to plane GMR and TMR sensors with... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4291623

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.