Current mirror for depletion-mode field effect transistor techno

Details Current mirror for depletion-mode field effect transistor techno Current mirror for depletion-mode field effect transistor techno

1988-10-31

1990-01-23

Mottola, Steven

Amplifiers

With semiconductor amplifying device

Including current mirror amplifier

330277, H03F 316

Patent

active

048961213

ABSTRACT:
A novel, precise current mirroring technique for depletion-mode field effect transistor technology uses a diode level-shifting circuit between the drain and the gate of a first depletion-mode Field Effect Transistor (FET) to keep its gate voltage below its drain voltage. The gate of the first depletion-mode FET is connected to the gate of a second depletion-mode FET. A current source is used to compensate for the current drawn by the level-shifting circuit. The current source preferably includes a FET and at least one Schottky diode.

REFERENCES:
patent: 3953807 (1976-04-01), Schade, Jr.
patent: 4525682 (1985-06-01), Lai et al.

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