Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1998-06-22
2000-03-07
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257266, 257287, H01L 2968, H01L 2980
Patent
active
060343850
ABSTRACT:
A semiconductor configuration includes a first semiconductor region which has a predetermined conductivity type and a first surface. There is a contact region disposed on the first surface of the first semiconductor region. There is a second semiconductor region disposed within the first semiconductor region underneath the contact region which has a conductivity type opposite the predetermined conductivity type of the first semiconductor region. A first p-n junction having a first depletion zone is formed between the first semiconductor region and the second semiconductor region. The second semiconductor region extends further than the contact region in all directions parallel to the first surface of the first semiconductor region to form at least one lateral channel region with a bottom in the first semiconductor region. The at least one lateral channel region is bounded toward its bottom by the first depletion zone of the first p-n junction. In an on state of the semiconductor configuration, the at least one lateral channel region conducts an electric current from the contact region or to the contact region.
REFERENCES:
patent: 4454623 (1984-06-01), Hill
patent: 4737469 (1988-04-01), Stevens
patent: 5543637 (1996-08-01), Baliga
IEEE Electron Device Letters, vol. EDL-6, No. 6 (Campbell, P.M. et al.), dated Jun. 1985, pp. 304-306.
International Publication WO 95/-7548 (Maier, R. et al.), dated Mar. 16, 1995.
German Utility Model G 94 11 601.6 (Siemens AG), dated Nov. 24, 1994.
Mitlehner Heinz
Stephani Dietrich
Weinert Ulrich
Greenberg Laurence A.
Guay John
Lerner Herbert L.
Siemens Aktiengesellschaft
Stemer Werner H.
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