Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1974-07-12
1976-04-27
James, Andrew J.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
357 55, 357 56, 357 60, 357 86, 307251, H01L 2980, H01L 2906, H01L 2904
Patent
active
039538796
ABSTRACT:
A field effect semiconductor device that has particular use in limiting current in electric circuits over a very wide power range. In a preferred form, the device consists of a crystalline-material semiconductor wafer having multiple channels at one major surface thereof, the channels being separated by grooves formed along parallel crystallographic planes of the crystalline material. The wafer material forming each of the channels is lightly doped and each channel is bounded by flat walls, parallel to one another and formed by highly doping the wafer material with a dopant that is opposite in type to that of the channels. All said one major surface of the wafer is highly doped with the opposite-type dopant to that of the channels with the exception of ohmic-electric-contact regions of each channel, which regions are highly doped with the same-type dopant as that of the channels. All said one surface, except at the edge or edges thereof, is covered by a first conductive terminal. The part of the wafer between the vicinity of the channels and the other major surface is highly doped with the same-type dopant as that of the channels. A second conductive terminal covers said other major surface, again with the exception of the edge or edges. Each terminal makes low-resistance contact with the wafer. The edges of the wafer and the sides thereof are covered by an electrically-insulating, chemically-passivating heat resistant mechanical covering. Each of the channels acts as a field effect transistor with its gate shorted to the first terminal.
REFERENCES:
patent: 3482151 (1969-12-01), Teszner et al.
patent: 3657573 (1972-04-01), Maute
patent: 3767982 (1973-10-01), Teszner et al.
patent: 3813585 (1974-05-01), Tarui et al.
patent: 3814995 (1974-06-01), Teszner
patent: 3841917 (1974-10-01), Shannon
patent: 3855608 (1974-12-01), George et al.
patent: 3855609 (1974-12-01), Magdo et al.
Fonstad, Jr. Clifton G.
O'Connor-d'Arlach Jorge
James Andrew J.
Massachusetts Institute of Technology
Santa Martin M.
Shaw Robert
Smith, Jr. Arthur A.
LandOfFree
Current-limiting field effect device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Current-limiting field effect device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Current-limiting field effect device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2006347