Current isolation means for integrated power devices

Details Current isolation means for integrated power devices Current isolation means for integrated power devices

1974-05-28

1976-10-26

Wojciechowicz, Edward J.

357 60, 357 37, 357 46, 357 88, 357 89, 357 90, H01L 29167, H01L 2900, H01L 2702, H01L 2904

Patent

active

039887723

ABSTRACT:
The minority carrier lifetime is drastically reduced in an integrated semiconductor power device by introducing deep level impurities such, for example, as gold, silver, platinum, nickel and copper into selected regions of the device by Thermal Gradient Zone Melting processing.

REFERENCES:
patent: 2813048 (1957-11-01), Pfann
patent: 3461359 (1969-08-01), Raithel et al.
patent: 3513367 (1970-05-01), Wolley
patent: 3727116 (1973-04-01), Thomas et al.
patent: 3775196 (1973-11-01), Wakamiya et al.

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