Current-in-the-plane spin valve magnetoresistive sensor with...

Details Current-in-the-plane spin valve magnetoresistive sensor with... Current-in-the-plane spin valve magnetoresistive sensor with...

2007-03-13

2007-03-13

Renner, Craig A. (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

C360S324120, C360S320000

Reexamination Certificate

active

10824701

ABSTRACT:
A bottom-pinned current-in-the-plane spin-valve magnetoresistive sensor has a dual metal-oxide capping layer on the top ferromagnetic free layer. The first capping layer is formed on the free layer and is one or more oxides of zinc (Zn). The second capping layer is formed on the first capping layer and is an oxide of a metal having an affinity for oxygen greater than Zn, such as one or more oxides of Ta, Al, Hf, Zr, Y, Ti, W, Si, V, Mg, Cr, Nb, Mo and Mn.

REFERENCES:
patent: 6178073 (2001-01-01), Hayashi
patent: 6303218 (2001-10-01), Kamiguchi et al.
patent: 6624985 (2003-09-01), Freitag et al.
patent: 6709767 (2004-03-01), Lin et al.
patent: 2002/0048127 (2002-04-01), Fukuzawa et al.
patent: 2002/0196589 (2002-12-01), Gill
patent: 2003/0095363 (2003-05-01), Horng et al.
patent: 2003/0167625 (2003-09-01), Li et al.
patent: 2004/0027730 (2004-02-01), Lille et al.

Affiliated with

Also associated with

Rating

Current-in-the-plane spin valve magnetoresistive sensor with... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Current-in-the-plane spin valve magnetoresistive sensor with..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Current-in-the-plane spin valve magnetoresistive sensor with... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3727763