Current enhanced photovoltaic device

Batteries: thermoelectric and photoelectric – Photoelectric – Panel or array

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136258, 136259, 357 2, 357 30, 427 39, 427 74, H01L 3106, H01L 3118

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043799434

ABSTRACT:
The disclosure is directed to photovoltaic devices having enhanced short circuit currents and efficiencies. The devices are made by depositing on a previously deposited doped amorphous semiconductor alloy layer a body of intrinsic amorphous semiconductor alloys including a first intrinsic layer, adjacent the doped layer, formed from the deposition of a non-etching starting material and a second intrinsic layer different in composition from the first intrinsic layer. The second intrinsic layer preferably includes silicon and fluorine while the first intrinsic amorphous alloy layer does not include fluorine. The first intrinsic layer may be formed by the glow discharge decomposition of silane gas alone. The thicknesses of the first and second intrinsic layers are adjusted so as to match the respective potential drops thereof with the first intrinsic layer being relatively thin as compared to the second intrinsic layer.

REFERENCES:
M. Moeller et al., "Properties of Fluorinated Amorphous Silicon Solar Cells," Proceedings, 3rd E.C. Photovoltaic Solar Energy Conf. (1980), Reidel Pub. Co. (1981), pp. 322-326.
Y. Kuwano et al., "Properties of Amorphous Si:F:H Film & Its Photovoltaic Characteristics," Japan. J. Appl. Phys., vol. 20 (1981), Supplement 20-2, pp. 157-162.
V. K. Dalal, "Design Considerations for a-Si Solar Cells," IEEE Trans. Electron Devices, vol. ED-27, pp. 662-670 (1980).
Y. Kuwano et al., "Development of Amorphous Si Solar Cells in Japan," Proceedings, 3rd E.C. Photovoltaic Solar Energy Conf. (1980), Reidel Pub. Co. (1981), pp. 309-316.

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