Current-driven semiconductor device and integrated circuit

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor

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Details

257198, H01L 310328, H01L 310336, H01L 31072, H01L 31109

Patent

active

060343826

ABSTRACT:
A current-driven-type semiconductor device including a substrate, an active part formed on the substrate, and a conductive semiconductor layer formed on the active part as a current path to the active part, wherein the conductive semiconductor layer includes a semiconductor layer having a first conductivity type and a first bandgap, and a semiconductor barrier layer having the first conductivity type and a second bandgap larger than the first bandgap.

REFERENCES:
patent: 5031013 (1991-07-01), Choi
patent: 5349202 (1994-09-01), Uemura
patent: 5489785 (1996-02-01), Tehrani et al.
patent: 5569944 (1996-10-01), Delaney et al.

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