Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1982-06-01
1984-09-11
Anagnos, Larry N.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307270, 307571, H03K 19094, H03K 1920
Patent
active
044712383
ABSTRACT:
An enhancement-mode field effect transistor (ENFET) logic circuit providing greater fan-out capability. The logic circuit employs a conventional common-source inverter section, but additionally incorporates a current-driving section which drives the common-source inverter section. A current-driven inverter logic circuit is realized by employing a second ENFET transistor to drive the gate of the common-source inverter section. A current-driven NOR gate is realized by employing two ENFET transistors in parallel which drive the common-source inverter section. Also a current-driven NAND gate is realized by utilizing a single transistor having two gate inputs to drive the common-source inverter section. The use of sweep-out circuitry allows for control of the operational speed of the device. The logic circuit designs have high fan-out capability compared to the common-source inverter circuit alone.
REFERENCES:
patent: 4093925 (1978-06-01), Yokoyama
patent: 4300064 (1981-11-01), Eden
patent: 4394589 (1983-07-01), Pham et al.
Long et al., "High Speed GaAs Integrated Circuits", Proceedings of the IEEE, vol. 70, No. 1, Jan. 1982, pp. 35-45.
Suyama et al., "Design and Performance of GaAs Normally-Off MESFET Integrated Circuits", IEEE Transactions on Electron Devices, vol. ED 27, No. 6, Jun. 1980, pp. 1092-1097.
Hickling Ronald M.
Landenberger Jay E.
Anagnos Larry N.
Anderson C. L.
Benman, Jr. W. J.
Hudspeth David R.
Hughes Aircraft Company
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