Current-controlled resonant tunneling device

Details Current-controlled resonant tunneling device Current-controlled resonant tunneling device

1994-10-14

1996-02-06

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 22, 257 23, 257 18, 257201, H01L 29205, H01L 2988

Patent

active

054897866

ABSTRACT:
A current-controlled resonant tunneling diode (RTD) having an InAs quantum well, AlGaSb barriers and InAs cladding layers is disclosed. The RTD of this invention displays an S-shaped negative differential resistance in its I-V relationship. As a result, the RTD displays the bistability necessary to greatly enhance the speed of operation of many key electronic components by eliminating the need for large load resistances in the circuit design.

REFERENCES:
Soderstrom et al. IEEE Elec. Dev. Lett. vol. 11, No. 1 Jan. 1990 pp. 27-29 "InAB/AlSb . . . Devices".
Beresford et al., Appl. Phys Lett., vol. 54, No. 19, 8 May 1989 pp. 1899-1901 "Negative . . . Temperature".
Chow, D. H. and Schulman J. N., "Intrinsic current bistability in InAs/Al.sub.x Ga.sub.1-x Sb resonant tunneling devices," Applied Phys. Lett., vol. 64, #1, 3 Jan. 1994, pp. 76-78.
Schulman, J. N., Chow, D. H. and Hasenberg, T. C., "InAs/Antimonide-Based Resonant Tunneling Structures with Ternary Alloy Layers," Proceedings of the Sixth International Conference on Modulated Semiconductor Structures, Garmisch-Partenkirchen, Germany, 23-27 Aug. 1993, ISSN 0038-1101, Solid-State Electronics, Apr.-Jun. 1994, pp. 981-985.
IBM Technical Disclosure Bulletin, "InAs-GaSb Quantum Well Resonant Tunnel Diode," vol. 31, No. 11, Apr. 1989, pp. 442-444.

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