Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1994-10-12
1997-09-23
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 40, 313504, 313505, 34082581, 345 76, 345 80, 345206, G09G 330
Patent
active
056707924
ABSTRACT:
In a current-controlled luminous element array, combinations of a luminous element of a current-controlled type, a current-controlling transistor for controlling the current of the luminous element, and a switching transistor are arranged in a matrix form between signal electrode lines and scan electrode lines such that the luminous element is connected at one terminal thereof to a power source electrode line and at the other terminal thereof to a drain electrode of the current-controlling transistor, a gate electrode of the current-controlling transistor and one signal electrode line have the switching transistor connected therebetween, and the current-controlling transistor in an arbitrary column of matrix has a source electrode thereof connected to one scan electrode line in another column.
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Howard, W.E., "Active-Matrix Techniques for Displays," Proceedings for the Society for Information Display (SID) vol. 27, No. 4, 1986, pp. 313-326
Japan Display '89, pp. 704-707, entitled "Matrix-Addressed Organic Thin film EL Display Panel".
EuroDisplay '90, pp. 216-219, entitled "Design of a Prototype Active Matrix CdSe TFT Adressed EL Display".
European Search Report.
Ikeda Naoyasu
Utsugi Koji
Guay John
Jackson Jerome
NEC Corporation
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