Current constricting phase change memory element structure

Details Current constricting phase change memory element structure Current constricting phase change memory element structure

2011-04-26

2011-04-26

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000, C257S004000, C257S005000, C257SE29020, C438S102000, C438S103000, C365S163000

Reexamination Certificate

active

07932507

ABSTRACT:
A layer of nanoparticles having a dimension on the order of 10 nm is employed to form a current constricting layer or as a hardmask for forming a current constricting layer from an underlying insulator layer. The nanoparticles are preferably self-aligning and/or self-planarizing on the underlying surface. The current constricting layer may be formed within a bottom conductive plate, within a phase change material layer, within a top conductive plate, or within a tapered liner between a tapered via sidewall and a via plug contains either a phase change material or a top conductive material. The current density of the local structure around the current constricting layer is higher than the surrounding area, thus allowing local temperature to rise higher than surrounding material. The total current required to program the phase change memory device, and consequently the size of a programming transistor, is reduced due to the current constricting layer.

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Yamashita, Ichiro, “Bio Nano Process: Fabrication of Nanoelectronic Devices Using Protein Supramolecules” IEEE International Electron Devices Meeting, 1-4244-0439-8/06, 2006.

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