Current confining light emitting diode

Details Current confining light emitting diode Current confining light emitting diode

1974-08-08

1977-03-01

Edlow, Martin H.

357 18, 357 58, H01L 3300

Patent

active

040104834

ABSTRACT:
The resistivity of particular layers of a gallium arsenide-gallium aluminum arsenide light emitting diode is altered to provide current confinement in the central regions around the well hole. This is accomplished by proton bombardment to increase resistivity of layers around the lower metal contact area while leaving a low resistivity path over the contact, by diffusion of a low resistivity region into an added high resistivity layer adjacent the light emitting well hole, or by diffusion into a reverse conductivity barrier layer over the lower metal contact area.

REFERENCES:
patent: 3312881 (1967-04-01), Yu
patent: 3824133 (1974-07-01), Dasaro
Schade et al., Appl, Phys. Lett., vol. 20, No. 10, May 15 1972, pp. 385-387.

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