Coherent light generators – Particular active media – Semiconductor
Patent
1981-03-25
1984-05-08
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
357 17, H01S 319
Patent
active
044479050
ABSTRACT:
Semiconductor light emitting devices, lasers and LEDs, are described in which the current flow channel is narrower near the top surface of the device and wider at its bottom near the active region. Also, described are several attenuation masks for fabricating the channels of these devices by particle bombardment.
REFERENCES:
patent: 3363195 (1968-01-01), Furnanage
patent: 3824133 (1974-07-01), D'Asaro
H. C. Casey, Jr., "Heterostructure Lasers", Academic Press, Inc., Part B, pp. 207-210, (1978).
W. B. Joyce, "Current-Crowded Carrier Confinement in Double-Heterostructure Lasers", J. Appl. Phys., vol. 51(5), May 1980, pp. 2394-2401.
R. W. Dixon et al., "(Al, Ga)As Double-Heterostructure Lasers . . . ", BSTJ, vol. 59, No. 6, Jul.-Aug. 1980, pp. 975-985.
Dixon Richard W.
Koszi Louis A.
Miller Richard C.
Schwartz Bertram
Bell Telephone Laboratories Incorporated
Davie James W.
Urbano Michael J.
LandOfFree
Current confinement in semiconductor light emitting devices does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Current confinement in semiconductor light emitting devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Current confinement in semiconductor light emitting devices will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1606960