Current confinement in semiconductor lasers

Details Current confinement in semiconductor lasers Current confinement in semiconductor lasers

1977-03-01

1978-11-07

Miller, Jr., Stanley D.

Oscillators

Molecular or particle resonant type

148 15, 148186, 148187, 357 65, 357 18, H01S 319

Patent

active

041248260

ABSTRACT:
Current confinement in semiconductor devices by means of buried high resistivity zones is described. For example, in a stripe geometry, semiconductor, junction laser the laterally separate, high resistivity zones, which confine current flow in a narrow channel between the upper and lower electrical contacts, are buried below the upper contact. This configuration permits current to flow from the upper contact into the body of the semiconductor over greatly increased area before it enters the channel. The current density at the interface between the upper contact and the semiconductor body is thereby reduced, making the quality of that interface less important. Several processes which employ proton bombardment for fabricating the laser are also described: (1) in one the normal sequence of Zn diffusion and proton bombardment is reversed, and (2) in the other the profiles of Zn doping and proton damage are suitably tailored.

REFERENCES:
patent: 3824133 (1974-07-01), D'Asaro
patent: 3936322 (1976-02-01), Blum et al.

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