Current confinement for a vertical cavity surface emitting laser

Coherent light generators – Particular active media – Semiconductor

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372 45, 372 96, H01S 319, H01S 308

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active

057646740

ABSTRACT:
A vertical cavity surface emitting laser having a planar structure, having an implantation or diffusion at the top of the mirror closest to the substrate or at the bottom of the mirror farthest from the substrate, to provide current confinement with the gain region, and having an active region and another mirror formed subsequent to the implantation or diffusion. This structure has an implantation or diffusion that does not damage or detrimentally affect the gain region, and does provide dimensions of current confinement that are accurately ascertained. Alternatively, the implantation or diffusion for current confinement may be placed within the top mirror, and several layers above the active region, still with minimal damage to the gain region and having a well-ascertained current confinement dimension.

REFERENCES:
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patent: 5343487 (1994-08-01), Scott et al.
patent: 5493577 (1996-02-01), Choquette et al.
R. Morgan et al., "Vertical-cavity surface-emitting laser arrays," (1995) SPIE, vol. 2398-09, Bellingham, WA. (Apr. 1995).

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