Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2011-07-19
2011-07-19
Ho, Tu-Tu V (Department: 2818)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S063000, C257S421000, C257S295000, C257SE27006, C257SE21665, C365S158000, C365S171000, C365S173000
Reexamination Certificate
active
07981697
ABSTRACT:
One embodiment of the present invention includes a memory element having a composite free layer including a first free sub-layer formed on top of the bottom electrode, a nano-current-channel (NCC) layer formed on top of the first free sub-layer, and a second free sub-layer formed on top of the NCC layer, wherein when switching current is applied to the memory element, in a direction that is substantially perpendicular to the layers of the memory element, local magnetic moments of the NCC layer switch the state of the memory element.
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Meng et al., Composite free layer for high density magnetic random access memory with low spin transfer current, Applied Physics Letters 89, 152509, Oct. 12, 2006.
Avalanche Technology, Inc.
Ho Tu-Tu V
Imam Maryam
IPxLaw Group LLP
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