Current block type semiconductor laser

Details Current block type semiconductor laser Current block type semiconductor laser

1994-06-01

1995-08-29

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

054467535

ABSTRACT:
An object of the present invention is to provide a semiconductor laser with a current block layer formed on an upper clad layer and composed of GaAs so as to securely close the rays of light in horizontal direction. The present invention is a current block type semiconductor laser having a substrate composed of GaAs where the band gap of an activation layer is smaller than that of GaAs, comprising an AlGaInP (the content of Ga may be zero) formed on the GaAs substrate and opposed main cladding layers except for a stripe-shaped current passageway region and a GaAs auxiliary cladding layer formed on the main cladding layer in the stripe-shaped current passageway region surrounded by the current block layer.

REFERENCES:
patent: 5345460 (1994-09-01), Takiguchi et al.
patent: 5355384 (1994-10-01), Inoue et al.
patent: 5363392 (1994-11-01), Kasukawa et al.
"0.98 .mu.m InGaAsP/InGaAs/GaAs Strained Quantum Well Lasers With A Buried Ridge Structure", by Sawada et al., extended Abstracts No. 3, 31p-C-11, Japan Society of Applied Physics and Related Societies, published Mar. 29, 1993.

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