Current biased dual DBR grating semiconductor laser

Coherent light generators – Particular resonant cavity – Specified cavity component

Reexamination Certificate

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C372S020000, C372S023000, C372S050121, C372S096000

Reexamination Certificate

active

06728290

ABSTRACT:

FIELD OF THE INVENTION
The field of the invention is semi conductor lasers.
BACKGROUND OF THE INVENTION
Multiwavelength optical sources are important components in applications such as wavelength division multiplexing, optical remote sensing, and optical data processing. Multiple wavelengths are commonly achieved from a single output by integrating the output from multiple, discrete lasers. This can lead to large and complex chip design, however. Other approaches, such as cascaded strongly gain-coupled DFB (distributed feedback) lasers, rely on the reflectivity comb from integrated multi wavelength feedback mechanisms for their operation. Such integrated design of the multi wavelength feedback makes it difficult to select and tune a wavelength while leaving other wavelength(s) unaffected.
Thus, there is a need for an improved semiconductor laser capable of dual wavelength operation. It is an object of the invention to provide such a laser.
SUMMARY OF THE INVENTION
These needs are met by the present a laser heterostructure having an active layer, a lateral waveguide terminating in an output aperture, and a gain section with a current drive electrode. A rear surface distributed Bragg grating with a tuning current electrode is formed on a surface of said laser heterostructure. The laser also includes a front surface distributed Bragg grating with a tuning current electrode on a surface of the laser heterostructure. The front surface distributed Bragg grating is closer to the output aperture than the rear surface distributed Bragg grating, There is a space between the rear surface distributed Bragg grating and the front surface distributed Bragg grating. A current drive electrode is formed on the space. Operation is best when the front surface distributed Bragg grating has adequate reflectivity at the Bragg wavelength with minimal scattering loss at other wavelengths, particularly at the wavelength of the rear surface Bragg grating.
In the present laser, dual-wavelength operation is easily achieved by biasing the gain section. A relatively low coupling coefficient, &kgr;, in the front grating reduces the added cavity loss for the back grating mode. Therefore, the back grating mode reaches threshold easily. The space section lowers the current induced thermal interaction between the two uniform grating sections, significantly reducing the inadvertent wavelength drift. As a result, a tunable mode pair separations (&Dgr;&lgr;) as small as 0.3 nm and as large as 6.9 nm can be achieved.


REFERENCES:
patent: 4826282 (1989-05-01), Alferness
patent: 4920542 (1990-04-01), Brosson et al.
patent: 5003550 (1991-03-01), Welch et al.
patent: 5048040 (1991-09-01), Paoli
patent: 5155736 (1992-10-01), Ono et al.
patent: 5325380 (1994-06-01), Clendening et al.
patent: 5325392 (1994-06-01), Tohmori et al.
patent: 5351262 (1994-09-01), Poguntke et al.
patent: 5379318 (1995-01-01), Weber
patent: 5440576 (1995-08-01), Welch et al.
patent: 5473625 (1995-12-01), Hansen et al.
patent: 5568311 (1996-10-01), Matsumoto
patent: 5581572 (1996-12-01), Delorme et al.
patent: 5648978 (1997-07-01), Sakata
patent: 5708674 (1998-01-01), Beernink et al.
patent: 5748660 (1998-05-01), Delorme et al.
patent: 5835650 (1998-11-01), Kitaoka et al.
patent: 5841799 (1998-11-01), Hiroki
patent: 6122306 (2000-09-01), Sartorius et al.
Lammert et al. “MQW DBR Lasers with Monolithically Integrated External-Cavity Electroabsorption Modulators Fabricated without Modification of the Active Region.” IEEE Photonics Technology Letters, vol. 9, No. 5, May 1997, pp. 566-568.*
S.D. Roh, K.E. Lee, J.S. Hughes, J.J. Coleman, Single and Tunable Dual-Wavelength Operation of an InGaAs-GaAs Ridge Waveguide Distributed Bragg Reflector Laser, IEEE Transactions on Photonics Letters, vol. 12, No. 1, Jan. 2000, pp. 16-18.
M. Maeda, T. Hirata, M. Suehiro, M. Hihara, A. Yamaguchi, H. Hosomatsu, “Photonic Integrated Circuit Combining Two GaAs Distributed Bragg Reflector Laser Diodes for Generation of the Beat Signal”, Jpn. J. Appl. Phys. vol. 31, 1992, pp. 183-185.
C.E. Zah, F.J. Favire, B. Pathak, R. Bhat, C. Caneau, P.S.D. Lin, A.S. Gozdz, N.C. Andreadakis, M.A. Koza, T.P. Lee, “Monolithic Integration of Multiwavelength Compressive-Strained Multiquantum-Well Distributed-Feedback Laser Array with Star Coupler and Optical Amplifiers,” Electron. Lett., vol. 28, 1992, pp. 2361-2362.
M.L. Osowski, R.M. Lammert, J.J. Coleman, “A Dual Wavelength Source with Monolithically Integrated Electyroabsorption Modulators and y-Junction Coupler by Selective-Area MOCVD,” IEEE Photon. Technol. Lett., vol. 9, 1997, pp. 158-160.
J. Hong, R. Finlay, R. Tong, C. Rogers, D. Goodchild, “Simultaneous Dual-Wavelength Operation in Cascaded Strongly Gain-Coupled DFB Lasers,” IEEE Photon, Tchnol. Lett., vol. 11, 1999, pp. 1354-1356.
S. Iio, M. Suehiro, T. Hirata, T. Hidaka, “Two-Longitudinal-Mode Laser Diodes,” IEEE Photon, Technol. Lett. vol. 7, 1995, pp. 959-961.
Y. Matsui, M.D. Pelusi, S. Arahira, Y. Ogawa, “Beat Frequency Generation up to 3.4 Thz from Simultaneous Two-Mode Lasing Operation of Sampled-Grating DBR Laser,” Electron. Lett. vol. 35, 1999, pp. 472-474.
A. Talneau, J. Charil, A. Ougazzaden, “Multiple Distributed Feedback Operation at 1.55 im with Uniform Output Powers in a Single Laser Diode”, Electron Lett., vol. 75, 1999, pp. 600-602.
S.D. Roh,, R.B. Swint, A.M. Jones, T.S. Yeoh, A.E. Huber, J.S. Hughes, J.J. Coleman, “Dual-Wavelength Asvmettic Cladding InGaAs-GaAs Ridge Wavelength Distributerd Bragg Reflector Lasers,” IEEE Photon, Technol. Lett. vol. 11, 1999, pp. 15-17.
P. Michler, M. Hilpert, G. Reiner, “Dynamics of Dual Wavelength Emission from a Coupled Semiconductor Microcavity Laser,” App.. Phys. Lett., vol. 70, 1997, pp. 2073-2075.
P. Pellandini, R.P. Stanley, R. Houdre, U. Oesteric, M. Ilegems, C. Weisbuch, “Dual Wavelength Laer Emission from a Coupled Semiconductor Microcavity”, Appl. Phys. Lett., vol. 71, 1997, pp. 864-866.
T. Hidaka, Y. Hatano, “Simultaneous Two Wave Oscillation LD using Biperiodic Binary Grating”, Electron Lett., vol. 27, 1991, pp. 1075-1076.
K. Lee, C. Shu, “Stable and Widely Tunable Dual Wavelength Continuous-Wave Operation of a Semiconductor Laser in a Novel Fabry-Perot Grating-Lens External Cavity”, IEEE J. Quantum Electron., vol. 33, 1997, pp. 1832-1838.
H. Ishii, H. Tanobe, P. Kano, Y. Tohmori, Y. Kondo, Y. Yoshikuni, “Broad-Range Wavelength Coverage (62.4 nm) with Superstructure Grating DBR Laser”, Electron Lett. vol. 32, 1996, pp. 454-455.
S. Lee, M. Heimbuch, D. Cohen, L. Coldren, S. DenBaars, “Integration of Semiconductor Laser Amplifiers with Sampled Grating Tunable Lasers for WDM Applications”, IEEE J. Select. Topics Quantum Electron. vol. 3, 1997, pp. 615-627.
A. Talneau, C. Ougier, S. Slempkes, “Multiwavelgnth Grating Reflectors for Widely Tunable Laser”, IEEE Photon. Technol. Lett., vol. 8, 1996, pp. 497-499.
R.M. Lammert, J.S. Hughes, S.D. Roh, M.L. Osowski, A.M. Jones, J.J. Coleman, “Low-Threshold NarrowLinewidth InGaAs-GaAs Ridge-Waveguide DBR Lasers with First-Order Surface Gratings”, IEEE Photon. Technol. Lett. vol. 9, 1997, pp. 149-151.
R.M. Lammert, A.M. Jones, C.T. Youtsey, J.S. Hughes, S.D. Roh, I. Adesida, J.J. Coleman, “InGaAsP-InP Ridge-WAveguide DBR Lasers with First-Order Surface Gratings Fabricated Using CAIBE”, IEEE Photon. Technol. Lett. vol. 9, 1997, pp. 1445-1447.
G.M. Smith, D.V. Forbes, J.J. Coleman, J.T. Verdeyen, “Optical Properties of Reactive Ion Etched Corner Reflector STrained-Layer InGaAs-GaAs-AlGaAs Quantum Well Lasers”, IEEE Photon. Technol. Lett. vol. 5, 1993, pp. 873-876.

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