Current-apertured vertical cavity laser

Coherent light generators – Particular active media – Semiconductor

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372 45, 372 92, 372 96, H01S 319

Patent

active

055947514

ABSTRACT:
A vertical-cavity surface-emitting laser (VCSEL) has an active region, first and second mirror stacks forming a resonant cavity with a radial variation in index forming a transverse optical mode, and a thin insulating slot within the cavity to constrict the current to a diameter less than the beam waist of the optical mode thereby improving device efficiency and preferentially supporting single mode operation. In one embodiment, an insulating slot is formed by etching or selectively oxidizing a thin aluminum-containing semiconductor layer in towards the center of a cylindrical mesa. The slot thickness is sufficiently thin that the large index discontinuity has little effect on the transverse optical-mode pattern. The slot may be placed near an axial standing-wave null to minimize the perturbation of the index discontinuity and allow the use of thicker slots. In a preferred embodiment, the current constriction, formed by the insulating slot, is located on the p-type side of the active region and has a diameter significantly less than the beam waist of the optical mode, thus minimizing outward diffusion of carriers and ensuring single transverse-mode operation of the laser by suppressing spatial hole burning.

REFERENCES:
patent: 5343487 (1994-08-01), Scott et al.
patent: 5412680 (1995-05-01), Swirhun et al.
patent: 5457328 (1995-10-01), Ishimatsu et al.
patent: 5493577 (1996-02-01), Choquette et al.
Hayshi et al., "A Record Low Threshold Index-Guided InGaAs/GaAIAs Vertical-Cavity Surface-Emitting Laser with a Native Oxide Confinement Structure", date unknown, Tokyo Institute of Technology, Precision and Intelligence Laboratory. (No Date).
Hadley et al., "Comprehensive Numerical Modeling of Vertical-Cavity Surface-Emitting Lasers", date unknown.
MacDougal et al., "Ultralow Threshold Current Vertical-Cavity Surface-Emitting Lasers with AlAs Oxide-GaAs Distributed Bragg Reflectors", IEEE Photonics Technology Letters, vol. 7, No. 3, Mar. 1995.

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