Curing silicon hydride containing materials by exposure to nitro

Coating processes – Electrical product produced – Metallic compound coating

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

427226, 427240, 4273762, 427377, 427387, 4273977, 427421, 4274301, B05D 512

Patent

active

054360293

ABSTRACT:
The present invention relates to a low temperature method of forming silica-containing ceramic coatings on substrates. The method involves applying a coating comprising a silicon hydride containing resin on a substrate and heating the coated substrate under an environment comprising nitrous oxide at a temperature sufficient to convert the resin to the silica-containing ceramic coating. This method is especially valuable for forming protective and dielectric coatings on electronic devices.

REFERENCES:
patent: 3615272 (1971-10-01), Collins et al.
patent: 4756977 (1988-07-01), Haluska et al.
patent: 4847162 (1989-07-01), Haluska et al.
patent: 4999397 (1991-03-01), Weiss et al.
patent: 5010159 (1991-04-01), Bank et al.
patent: 5063267 (1991-11-01), Hanneman et al.
patent: 5116637 (1992-05-01), Baney et al.
patent: 5145723 (1992-09-01), Ballance et al.
Cotton et al, "Advanced Inorganic Chemistry", Section 12-6 Oxides Of Nitrogen, p. 341, (Feb. 1967).
The Merck Index, Eleventh Edition, "6575 Nitrous Oxide", p. 1051, (1990). [no month].
Desu et al., J Electrochem Soc., vol. 139, No. 9, Sep. 1992.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Curing silicon hydride containing materials by exposure to nitro does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Curing silicon hydride containing materials by exposure to nitro, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Curing silicon hydride containing materials by exposure to nitro will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-738353

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.