Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1992-08-04
1993-12-14
Griffin, Donald A.
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
361313, 3613211, H01B 1200, B32B 100, H01G 406
Patent
active
052702987
ABSTRACT:
A method of forming crystalline metal oxide thin films on silicon and the resultant structure. A crystalline buffer layer (10) of yttria-stabilized zirconia is deposited on a silicon substrate (12). A thin template layer (10) of an anisotropic perovskite such as bismuth titanate or yttria barium copper oxide is deposited on the template layer under conditions favoring c-axis oriented growth. A nominally cubic metal-oxide layer (16) is deposited on the template layer which facilitates its singly crystalline growth. The metal oxide, often a nominally cubic perovskite, may be a conductive electrode, a ferroelectric, a non-hysteretic dielectric, a piezoelectric, or other class of material.
REFERENCES:
patent: 4677336 (1987-06-01), Kushida et al.
patent: 4980339 (1990-12-01), Setsune et al.
patent: 5051950 (1991-09-01), Evans, Jr. et al.
patent: 5055445 (1991-10-01), Belt et al.
patent: 5077270 (1991-12-01), Takeda et al.
patent: 5130294 (1992-07-01), Char
patent: 5142437 (1992-08-01), Kammerdiner et al.
D. K. Fork et al., "High critical currents in strained epitaxial YBA.sub.2 Cu.sub.3 O.sub.7-.delta. on Si," Applied Physics Letters, 1990, vol. 57, pp. 1161-1163.
J. T. Cheung et al., "Conductive and epitaxial LaSrCoO thin film grown by pulsed laser deposition as electrodes for ferroelectric PLZT devices," Abstracts: 4th International Symposium on Integrated Ferroelectrics, Mar. 1992, Monterey, Calif., p. 9C.
E. C. Subbarao, "Ferroelectricity in Bi.sub.4 Ti.sub.3 O.sub.12 and Its Solid Solutions," Physical Review, 1961, vol. 122, pp. 804-807.
D. R. Lampe et al., "Integration of UHV-grown ferroelectric films into nonvolatile memories," Seventh International Symposium on the Applications of Ferroelectrics, 1990, Paper 7.5.
K. Sreenivas et al., "Surfacce acoustic wave propagation on lead zirconate titanate thin films," Applied Physics Letters, 1988, vol. 52, pp. 709-711.
T. Kawaguchi et al., "PLZT thin-film waveguides," Applied Optics, 1984, vol. 23, pp. 2187-2191.
A. Mukherjee et al., "Electro-optic effects in thin-film lanthanum-doped lead zirconate titanate," Optics Letters, 1990, vol. 15, pp. 151-153.
S. H. Lee et al., "Two-dimensional silicon/PLZT spatial light modulators; design considerations and technology," Optical Engineering, 1986, vol. 25, pp. 250-260.
S. Thakoor, "High speed, nondestructive readout from thin-film ferroelectric memory," Applied Physics Letters, 1992, vol. 60, pp. 3319-3321.
R. Takayama et al., "Preparation and characteristics of pyroelectric infrared sensors made of c-axis oriented La-modified PbTiO.sub.3 thin films," Journal of Applied Physics, 1987, vol. 61, pp. 411-415.
R. E. Newnham et al., "Smart Electroceramics," Journal of the American Ceramics Society, 1991, vol. 74, pp. 463-479.
S. L. Swartz, "Topics in Electronic Ceramics," IEEE Transactions on Electrical Insulation, 1990, vol. 25, pp. 935-987.
Bell Communications Research Inc.
Falk James W.
Griffin Donald A.
Suchyta Leonard Charles
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