Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Including change in a growth-influencing parameter
Patent
1992-07-07
1994-07-05
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
Including change in a growth-influencing parameter
4272551, 427132, 117904, 117952, 117902, 117108, C30B 2306
Patent
active
053264240
ABSTRACT:
Thin films of single crystal, cubic boron nitride phosphide are provided on, and in crystallographic registry with, an underlying silicon substrate which is oriented along a single crystallographic axis. The cubic boron nitride phosphide films are deposited using laser ablation methods. The boron nitride phosphide film has a crystallographic lattice constant which can be systematically varied depending upon the desired film composition and processing parameters. Preferably, the target, and accordingly the resulting thin film composition, is characterized by a chemical formula of BN.sub.(1-x) P.sub.(x) where x is about 0.23. This particular composition results in a crystallographic lattice constant essentially equal to the single crystal silicon substrate. The film may also have the formula BN1-xPx where x<0.ltoreq.1. The phosphorus concentration may also be decreased to zero throughout the film so as to provide boron nitride material at the surface, which is characterized by a good crystallographic lattice match with the underlying substrate. The resulting films are particularly suitable for semiconducting applications over a wide range of temperatures.
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Motojima et al., "Preparation of Novel B-N-P Ternary Films by Chemical Vapor Deposition", Materials Letters, vol. 8, No. 11,12, Nov. 1989.
Paul, "Laser Assisted Deposition of BN Films on InP for MIS Applications", Electronic Letters, vol. 25, No. 23 (1989) pp. 1602-1603.
Baucom Kevin C.
Doll Gary L.
Brooks Cary W.
General Motors Corporation
Kunemund Robert
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