Cubic boron nitride phosphide films

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Including change in a growth-influencing parameter

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

4272551, 427132, 117904, 117952, 117902, 117108, C30B 2306

Patent

active

053264240

ABSTRACT:
Thin films of single crystal, cubic boron nitride phosphide are provided on, and in crystallographic registry with, an underlying silicon substrate which is oriented along a single crystallographic axis. The cubic boron nitride phosphide films are deposited using laser ablation methods. The boron nitride phosphide film has a crystallographic lattice constant which can be systematically varied depending upon the desired film composition and processing parameters. Preferably, the target, and accordingly the resulting thin film composition, is characterized by a chemical formula of BN.sub.(1-x) P.sub.(x) where x is about 0.23. This particular composition results in a crystallographic lattice constant essentially equal to the single crystal silicon substrate. The film may also have the formula BN1-xPx where x<0.ltoreq.1. The phosphorus concentration may also be decreased to zero throughout the film so as to provide boron nitride material at the surface, which is characterized by a good crystallographic lattice match with the underlying substrate. The resulting films are particularly suitable for semiconducting applications over a wide range of temperatures.

REFERENCES:
patent: 4683043 (1987-07-01), Melton et al.
patent: 4714625 (1987-12-01), Chopra et al.
patent: 4843031 (1989-06-01), Bon et al.
patent: 4957773 (1990-09-01), Spencer et al.
patent: 4973494 (1990-11-01), Yamazaki
Motojima et al., "Preparation of Novel B-N-P Ternary Films by Chemical Vapor Deposition", Materials Letters, vol. 8, No. 11,12, Nov. 1989.
Paul, "Laser Assisted Deposition of BN Films on InP for MIS Applications", Electronic Letters, vol. 25, No. 23 (1989) pp. 1602-1603.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Cubic boron nitride phosphide films does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Cubic boron nitride phosphide films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Cubic boron nitride phosphide films will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-794150

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.