Cubic boron nitride carbide films

Details Cubic boron nitride carbide films Cubic boron nitride carbide films

1992-07-07

1994-07-19

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

Including change in a growth-influencing parameter

4272551, 117108, 117904, 117951, 117952, C30B 2936

Patent

active

053306112

ABSTRACT:
Thin films of cubic boron nitride carbide are provided on an underlying silicon substrate. The cubic boron nitride carbide films are deposited using laser ablation methods. The boron nitride film has a crystallographic lattice constant which can be varied depending upon the desired film composition and processing parameters. Preferably, the resulting thin film composition is characterized by a chemical formula of (BN).sub.1-x C.sub.x where x is about 0.2. The resulting films are particularly suitable for wear resistance and semiconducting applications over a wide range of temperatures.

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