Cubic boron nitride bipolar transistor

Details Cubic boron nitride bipolar transistor Cubic boron nitride bipolar transistor

1991-05-22

1992-11-17

Wojciechowicz, Edward J.

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

257198, H01L 2972

Patent

active

051648105

ABSTRACT:
A bipolar transistor is formed from epitaxial cubic boron nitride grown on a silicon substrate which is a three to two commensurate layer deposited by pulsed laser evaporation techniques. The thin film, cubic boron nitride bipolar transistor is in epitaxial registry with an underlying single crystal silicon substrate. The bipolar transistor is particularly suitable for high temperature applications.

REFERENCES:
patent: 4980730 (1990-12-01), Mishima et al.
Doll et al-"The Growth and Characterization of Epitaxial Cubic Boron Nitride Films on Silicon"-Oct. 25, 1990-Physical Review Letters.
Doll et al-"X-Ray Diffraction Study of Cubic Boron Nitride Grown Epitaxially on Silicon"-1990-Materials Research Society, Boston, Mass.
Lin et al-Thin Solid Films, vol. 153, No. 1, Oct. 26, 1987 pp. 487-496.
Electronics Letters, vol. 25, No. 23, Nov. 9, 1989, pp. 1602-1603; T. K. Paul et al.: "Laser-assisted deposition of BN films on InP for MIS applications".
Thin Solid Films, vol. 153, Oct. 26, 1987, pp. 487-496; P. Lin et al.: "Preparation and properties of cubic boron nitride coatings".

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