Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With provision for cooling the housing or its contents
Reexamination Certificate
2006-05-23
2010-11-09
Lebentritt, Michael S (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With provision for cooling the housing or its contents
C257S746000, C257S762000, C257S763000, C257S771000, C257SE21159, C257SE23009, C257SE23101, C257SE23112, C257SE29089, C257SE29106, C438S030000, C438S610000, C438S648000
Reexamination Certificate
active
07830001
ABSTRACT:
A Cu—Mo substrate10according to the present invention includes: a Cu base1containing Cu as a main component; an Mo base having opposing first and second principal faces2a,2band containing Mo as a main component, the second principal face2bof the Mo base2being positioned on at least a portion of a principal face1aof the Cu base1; and a first Sn—Cu-type alloy layer3covering the first principal face2aand side faces2cand2dof the Mo base2, the first Sn—Cu-type alloy layer3containing no less than 1 mass % and no more than 13 mass % of Sn.
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PCT International Preliminary Report on Patentability dated Nov. 23, 2007 for International Application No. PCT/JP2006/310223 filed May 23, 2006.
Ishio Masaaki
Kikui Fumiaki
Shiomi Kazuhiro
Yokota Masayuki
Butler Marc W.
Lebentritt Michael S
Neomax Materials Co., Ltd.
Nixon & Peabody LLP
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