Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package
Patent
1993-02-09
1998-06-30
Arroyo, T. M.
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
257704, 257706, 257710, 257729, H01L 2302, H01L 2312, H01L 2310, H01L 2306
Patent
active
057738793
ABSTRACT:
The semiconductor package and manufacturing method thereof whereby the inexpensive package of high thermal conductivity is obtained by applying a Cu/Mo/Cu clad material for a base plate which matches the thermal expansion of a semiconductor chip, and the inexpensive package with high heat transfer suitable for a high frequency device is obtained by controlling a thickness of glass, and a size of a lead (width, thickness), thereby to match impedance of a wiring portion with that of the semiconductor chip, by plating only necessary areas with Au, and by plating the exterior with Sn.
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The Glass Industry, Electrical Properties and Uses of Glass, by R.G. Snell, pp. 484-521, Sep. 1962.
Fusayasu Tosihiro
Kagata Kenji
Kitamura Isao
Kohara Masanobu
Takada Mitsuyuki
Arroyo T. M.
Mitsubishi Denki & Kabushiki Kaisha
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