Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2005-06-22
2008-09-02
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C257S565000, C257S584000, C257S587000, C257S741000, C257S744000, C257S745000, C257S762000, C257S768000, C257SE29111, C257SE29139, C257SE29143, C257SE29144
Reexamination Certificate
active
07420227
ABSTRACT:
The present invention is a compound semiconductor device characterized in that it is Cu-metalized to improved the reliability of the device and to greatly reduce the cost of production.
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Chang Edward Yi
Chang Shang-Wen
Lee Cheng-Shih
Ho Hoang-Quan
Huynh Andy
King Anthony
National Chiao Tung University
WPAT, P.C.
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