Cu-metalized compound semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor

Reexamination Certificate

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C257S565000, C257S584000, C257S587000, C257S741000, C257S744000, C257S745000, C257S762000, C257S768000, C257SE29111, C257SE29139, C257SE29143, C257SE29144

Reexamination Certificate

active

07420227

ABSTRACT:
The present invention is a compound semiconductor device characterized in that it is Cu-metalized to improved the reliability of the device and to greatly reduce the cost of production.

REFERENCES:
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patent: 2003/0047753 (2003-03-01), Fujita et al.
patent: 2004/0026701 (2004-02-01), Murai et al.
Chang et al. A Gold Free Fully Copper Metallized InGaP/GaAs HBT. 2004. 12th GAAS Symposium—Amsterdam. pp. 299-301.
Chang et al. Use of WNx as the Diffusion Barrier for Interconnect Copper Metallization of InGaP-GaAs HBTs. Jul. 2004, IEEE Transactions On Electron Devices. vol. 51, No. 7. pp. 1053-1059.
Machac et al, W/Pt/Ge/Pd Contact Optimization for the Measurement of GaAs Quantum Structures. Oct. 5-7, 1998. IEEE. pp. 167-170.
Rawal et al. Properties of W-Ge-N as a diffusion barrier material for Cu. Applied Physics Letters. 2005. vol. 87, pp. 111902-1 through 111902-3.
Rawal et al. Investigation of W-Ge-N deposited on Ge as a diffusion barrier for Cu metallization. Applied Physics A. Sep. 14, 2006. vol. 85, pp. 325-329.
Jill S Becker et al., Diffusion barrier properties of tungsten nitride films grown by atomic layer deposition. . . , Journal Apr. 7, 2003, pp. 2239-2241, vol. 82 No. 14, American Institute of Physics.
Seshadri Ganguli et al., Development of tungsten nitride film as barrier layer for copper metallization, Journal, Jan. 2000, pp. 237-241, vol. 18 No. 1, Journal of Vacuum Science and Technology B.
S C Sun et al., A new CVD tungsten nitride diffusion barrier for Cu interconnection, Symposium, Jun. 1996, pp. 46-47, VLSI Technology, Digest of Technical Papers.
Byung Lyul Park et al., Characteristics of PECVD grown tunsten nitride films as diffusion barrier layers for ULSI DRAM applications, Journal, Feb. 1997, Journal of Electronic Materials.

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