Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2011-08-09
2011-08-09
Le, Thao X (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257SE29151, C438S149000
Reexamination Certificate
active
07994503
ABSTRACT:
An object of the present invention is to provide: a Cu alloy wiring film that makes it possible to use Cu having a low electrical resistivity as a wiring material, exhibit a high adhesiveness to a glass substrate, and avoid the danger of peel off from the glass substrate; a TFT element for a flat-panel display produced with the Cu alloy wiring film; and a Cu alloy sputtering target used for the deposition of the Cu alloy wiring film. The present invention is a wiring film2composing a TFT element1for a flat-panel display and a sputtering target used for the deposition of the film and the material comprises Cu as the main component and at least one element selected from the group consisting of Pt, Ir, Pd, and Sm by 0.01 to 0.5 atomic percent in total. The wiring film2is layered on a glass substrate3and further a transparent conductive film5is layered thereon while an insulating film4is interposed in between.
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Gotou Hiroshi
Hino Aya
Onishi Takashi
Tomihisa Katsufumi
(Kobe Steel, Ltd.)
Gordon Matthew
Le Thao X
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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