CSP type semiconductor device with reduced package size

Details CSP type semiconductor device with reduced package size CSP type semiconductor device with reduced package size

1998-08-31

2001-07-31

Williams, Alexander O. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

C257S666000, C257S698000, C257S693000, C257S676000, C257S684000, C257S797000, C257S738000, C257S737000, C257S692000

Reexamination Certificate

active

06268652

ABSTRACT:

BACKGROUND OF THE INVENTION
The present invention relates to a CSP (chip size package) type semiconductor device and manufacturing methods thereof, particularly with respect to the CSP type semiconductor device having a COL (chip only lead)-BGA (ball grid array) configuration.
DESCRIPTION OF THE RELATED ART
As can be seen in FIG.
1
A and
FIG. 1B
, with respect to a conventional CSP type semiconductor device, leads
30
are attached to the back side of a semiconductor chip
60
A by an adhesive insulating tape
70
A, each lead
30
being connected to a bonding pad
50
on the surface of the semiconductor chip
60
A by a wire
90
. The above elements are sealed by a mold resin
110
A. Furthermore, each lead
30
is connected to a solder ball
120
. Reference numeral
40
indicates a suspension pin.
The conventional CSP type semiconductor device as described above includes a COL, structure and a BGA structure.
According to the conventional CSP type semiconductor device having the COL-BGA structure as shown in FIG.
1
A and
FIG. 1B
, in connecting the bonding pad
50
of the semiconductor chip and the lead
30
by the wire
90
, the connecting point of the lead
30
and the wire
90
has to keep a certain distance from the semiconductor chip
60
A, so that a capillary
130
of a wire bonding device would not touch the semiconductor chip
60
A, as in the manner shown in FIG.
2
. The distance between the connecting point of the lead and the wire is determined by a distance between a side of the semiconductor chip
60
A and the wire
90
, and dimensions and a margin of the capillary
130
. The distance, for example, has to be between 250 &mgr;m-300 &mgr;m. Moreover, the connecting point of the wire
90
and the lead
30
has to be included within the mold resin
110
A, in order to secure moisture resistance.
With respect to the conventional CSP type semiconductor device, not to mention, its external shape dimensions have to be maintained within a certain permissible range of value. Furthermore, the distance of the side of the semiconductor chip and the side of the mold resin at one side has to be kept 1 mm or below. Provided that the burr size of the mold resin is about 200 &mgr;m, the dimensions of the semiconductor chip are in error by ±50 &mgr;m, and positional shifts of a semiconductor chip at a time of mounting or at a time of wire bonding are indispensable, the thickness of the mold resin in view of the connecting point of the wire
90
and the lead
30
becomes considerably thin. Moreover, in the vicinity of the connecting point, an end part of the lead
30
is exposed from the mold resin
110
A. Accordingly, it is difficult to maintain moisture resistance or excess moisture tolerance under such circumstances.
SUMMARY OF THE INVENTION
It is therefore an object of the present invention to provide a CSP type semiconductor device and manufacturing methods thereof, the CSP type semiconductor device being suitable in improving moisture resistance or excess moisture tolerance.
According to a first aspect of the present invention, there is provided a CSP type semiconductor device comprising: a semiconductor chip forming an electronic circuit on a main surface thereof and a plurality of terminals, i.e. first pads and second pads; an insulating tape being attached to the back side of the main surface of the semiconductor chip; first leads and second leads each of them being arranged in parallel beneath the back side of the semiconductor chip while the insulating tape is placed between themselves and the semiconductor chip; first wires and second wires connecting the first pads and the second pads to the first leads and the second leads, respectively; and a mold resin sealing the above components with respect to certain portions, the first leads passing through underneath the semiconductor chip, stretching from a first side of the mold resin toward a second side of the same although not touching it, forming first end parts at tips thereof, the first end parts connecting to the first wires, the second leads passing through underneath the semiconductor chip, stretching from the second side of the mold resin toward the first side of the same although not touching it, forming second end parts at tips thereof, the second end parts connecting to the second wires, the first leads and the second leads connecting to first conductive balls and second conductive balls, respectively, the first and the second conductive balls penetrating through the mold resin.
With respect to the first aspect of the invention, it can be arranged such that the whole of the first leads and the second leads are positioned lower than where a plane including the back side of the semiconductor chip is, and that the first end parts and the second end parts bond with the first wires and the second wires, respectively. Furthermore, it can also be arranged such that each of the first leads and the second leads is bent toward the main surface of the semiconductor chip after passing underneath the semiconductor chip, and that the first end parts and the second end parts of the leads are connected to the first wires and the second wires, respectively, by soldering.
According to a second aspect of the present invention, there is provided a method of manufacturing a CSP type semiconductor device, comprising the steps of: preparing a lead frame including a first frame and a second frame which are parallel to each other, a first tie-bar and a second tie-bar each of which connecting the first frame and the second frame together, first leads branching from the first tie-bar and stretching toward the second tie-bar, having their tips forming first end parts, second leads branching from the second tie-bar and stretching toward the first tie-bar, having their tips forming second end parts, first suspension pins branching from the first frame, and second suspension pins branching from the second frame; applying an insulating tape at the back side of the semiconductor chip to have the semiconductor chip be attached to the first suspension pins and the second suspension pins of the lead frame by applying insulating adhesive materials, the main surface of the semiconductor chip forming an electronic circuit and a plurality of terminals thereof, i.e. first pads and second pads; executing wire bonding for connecting the first pads and the second pads with the first end parts and the second end parts by first wires and second wires, respectively; shifting the first end parts and the second end parts toward the semiconductor chip by mechanically deforming a certain portion of each first lead at the side of the first tie-bar, and a certain portion of each second lead at the side of the second tie-bar; forming a mold resin for sealing the first leads, the second leads, the first suspension pins and the second suspension pins, with respect to certain portions thereof arranged in the vicinity of the semiconductor chip, together with the first wires, the second wires, and the semiconductor chip; selectively removing the mold resin so as to expose the first leads and the second leads thus forming first conductive balls and second conductive balls; and cutting off the first leads, the second leads, the first suspension pins, and the second suspension pins from the first tie-bar, the second tie-bar, the first frame, and the second frame, respectively.
According to a third aspect of the present invention, there is provided a method of manufacturing a CSP type semiconductor device, comprising the steps of: preparing a lead frame including a first frame and a second frame which are parallel to each other, a first tie-bar and a second tie-bar each of which connecting the first frame and the second frame together, first leads branching from the first tie-bar and stretching toward the second tie-bar while bending near the end toward the first tie-bar, having their tips forming first end parts, second leads branching from the second tie-bar and stretching toward the first tie-bar while bending near the end toward the second tie-bar, having their ti

Affiliated with

Also associated with

Rating

CSP type semiconductor device with reduced package size does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CSP type semiconductor device with reduced package size, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CSP type semiconductor device with reduced package size will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2473936