Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2007-08-07
2007-08-07
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257SE23021, C257SE23105, C257S737000, C257S778000, C257S734000, C257S349000, C257S459000, C257S759000, C257S782000, C257S700000, C257S701000, C257S774000, C257S773000, C257S732000
Reexamination Certificate
active
10940783
ABSTRACT:
A semiconductor device comprises a semiconductor chip which has a first surface, a pad which is formed directly on the first surface, an oxide film which is formed on the first surface, an insulating film which is formed on the oxide film and a part of the pad, a conductive film which is formed on the insulating film and the pad, a sealing material which covers a part of the conductive film and the insulating film and a bump which is formed over the conductive film, wherein the bump is exposed from a surface of the sealing material.
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Yamane Tae
Yoshida Hideaki
Oki Electric Industry Co. Ltd.
Rabin & Berdo PC
Williams Alexander Oscar
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