Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1993-04-23
1995-01-17
Bovernick, Rodney B.
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
372 22, 372 21, 359328, 117 36, 117944, H01S 3109, G02F 137, B01J 1704
Patent
active
053817540
ABSTRACT:
The present invention relates to single crystals of CsB.sub.3 O.sub.5 having large dimension and high quality which can be grown by pulling methods. The single crystals of CsB.sub.3 O.sub.5 are useful as NLO materials. The NLO devices made of CsB.sub.3 O.sub.5 single crystals can be used in a laser system of high power density and relatively large divergence and posses a character of high SHG conversion efficiency. Moreover, the NLO devices of the present invention are capable of producing coherent harmonics of wavelength as short as 170 nm and tolerating larger processing error of crystals.
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Sasaki Takatomo
Wu Yicheng
Bovernick Rodney B.
Flores Victor
Sanghavi Hemang
University of Science and Technology of China
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