Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having growth from a solution comprising a solvent which is...
Reexamination Certificate
2008-01-08
2008-01-08
Gupta, Yogendra N. (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having growth from a solution comprising a solvent which is...
C117S006000, C117S021000, C117S036000, C117S074000, C117S078000, C117S089000, C117S100000, C117S109000, C117S216000, C117S957000, C117S958000, C438S095000, C438S900000
Reexamination Certificate
active
11082846
ABSTRACT:
A method for a growing solid-state, spectrometer grade II-VI crystal using a high-pressure hydrothermal process including the following steps: positioning seed crystals in a growth zone of a reactor chamber; positioning crystal nutrient material in the nutrient zone of the chamber; filling the reactor with a solvent fluid; heating and pressuring the chamber until at least a portion of the nutrient material dissolves in the solvent and the solvent becomes supercritical in the nutrient zone; transporting supercritical from the nutrient zone to the growth zone, and growing the seed crystals as nutrients from the supercritical fluid deposit on the crystals.
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D'Evelyn Mark Philip
Leman John Thomas
Park Dong-Sil
General Electric Company
Gupta Yogendra N.
Nixon & Vanderhye P.C.
Rao G. Nagesh
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