Crystallographically oriented growth of silicon over a glassy su

Details Crystallographically oriented growth of silicon over a glassy su Crystallographically oriented growth of silicon over a glassy su

1995-06-05

1996-09-17

Robinson, Ellis

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 95, 117935, 117947, 117949, C30B 2518

Patent

active

055564631

ABSTRACT:
A method of forming a crystallographically oriented silicon layer over a glassy layer of, for example, SiO.sub.2. A templating layer of a layered perovskite, preferably Bi.sub.4 Ti.sub.3 O.sub.12, is deposited on the glassy layer under conditions favoring its crystallographic growth with its long c-axis perpendicular to the film. The silicon is then grown over the templating layer under conditions usually favoring monocrystalline growth. Thereby, it grows crystallographically aligned with the underlaying templating layer.

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patent: 5155658 (1992-10-01), Inam et al.
patent: 5168420 (1992-12-01), Ramesh et al.
patent: 5221412 (1993-06-01), Kagata
patent: 5225031 (1993-07-01), McKee
patent: 5248564 (1993-09-01), Ramesh
patent: 5270298 (1993-12-01), Ramesh

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