Crystallogenesis device and process

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state

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117 81, 117206, 117219, 117223, C30B 710

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active

059320052

ABSTRACT:
The material of the crystal (2) formed by solidification is deposited in a crucible (1), whose wall is perforated by two ducts for the injection of pressure at different heights (6, 7). A differential pressure is created between the two ducts, the pressure of the lower duct (7) being higher by a value roughly equal to the hydrostatic pressure of the remaining liquid (3), so that a clearance (5) is spontaneously formed between the crystal (2) and the crucible (1) and problems caused by differential thermal contractions on cooling are avoided.

REFERENCES:
patent: 4242307 (1980-12-01), Fally
patent: 4668493 (1987-05-01), Levin
patent: 5698029 (1997-12-01), Fujikawa et al.
patent: 5772761 (1998-06-01), Petroz

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