Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Patent
1997-12-11
1999-08-03
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
117 81, 117206, 117219, 117223, C30B 710
Patent
active
059320052
ABSTRACT:
The material of the crystal (2) formed by solidification is deposited in a crucible (1), whose wall is perforated by two ducts for the injection of pressure at different heights (6, 7). A differential pressure is created between the two ducts, the pressure of the lower duct (7) being higher by a value roughly equal to the hydrostatic pressure of the remaining liquid (3), so that a clearance (5) is spontaneously formed between the crystal (2) and the crucible (1) and problems caused by differential thermal contractions on cooling are avoided.
REFERENCES:
patent: 4242307 (1980-12-01), Fally
patent: 4668493 (1987-05-01), Levin
patent: 5698029 (1997-12-01), Fujikawa et al.
patent: 5772761 (1998-06-01), Petroz
Abadie Jacques
Duffar Thierry
Dusserre Pierre
Centre National d'Etudes Spatiales
Commissariat a l''Energie Atomique
Hiteshew Felisa
Meller Michael N.
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