Crystallizing method of ferroelectric film

Details Crystallizing method of ferroelectric film Crystallizing method of ferroelectric film

1994-10-11

1995-08-22

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from solid or gel state

Using heat

117 7, 117 9, 117 10, 117947, C30B 106

Patent

active

054430305

ABSTRACT:
A lower capacitor electrode is formed on the basic plate 1, and thereafter a ferroelectric film, for example, a PZT film having the Pb is formed. ITO, RuO2, SnO2 which are Pt or oxide conductive material are formed as a cap layer into 200 .ANG. or more in film thickness by a sputtering method or silicone oxide film or the like are formed with 200A or more in film thickness by a thermal CVD method. Thereafter, a thermal operating operation is effected. By the prevention of the Pb from being evaporated at the thermal processing time, the elaborate ferroelectric film of stoichiometrical perovskite construction can be formed.

REFERENCES:
patent: 5043049 (1991-08-01), Takenaka
patent: 5119154 (1992-06-01), Gnadinger
patent: 5155658 (1992-10-01), Inam et al.
Holman et al, "Intrisic Nonstoichiometry in the Lead Zirconate-Lead Titanate System . . . ," J. Applied Physics, vol. 44, No. 12 Dec. 1973 pp. 5227-5236.

Affiliated with

Also associated with

Rating

Crystallizing method of ferroelectric film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Crystallizing method of ferroelectric film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Crystallizing method of ferroelectric film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2135266