Crystallization of grain boundary phases in SiC ceramics through

Details Crystallization of grain boundary phases in SiC ceramics through Crystallization of grain boundary phases in SiC ceramics through

1992-12-29

1994-01-25

Group, Karl

Compositions: ceramic

Ceramic compositions

Carbide or oxycarbide containing

501 89, 501 92, C04B 3556

Patent

active

052815641

ABSTRACT:
A silicon carbide ceramic having crystalline grain boundary phases is prepared by heating a composition comprising silicon carbide, a silicate glass and a high metal content transition metal silicide, to a temperature of 1300.degree. to 2100.degree. C. under vacuum until oxygen is removed from the glass as SiO gas, and the glass that remains within the silicon carbide ceramic crystallizes.

REFERENCES:
patent: 4306030 (1981-12-01), Watanabe et al.
patent: 4912806 (1990-03-01), Michael et al.
patent: 4957887 (1990-09-01), Michael et al.

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