Crystallization from high temperature solutions of Si in Cu/Al s

Details Crystallization from high temperature solutions of Si in Cu/Al s Crystallization from high temperature solutions of Si in Cu/Al s

1994-05-27

1996-08-13

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Liquid phase epitaxial growth

117 64, 117 67, 117934, C30B 1902

Patent

active

055446167

ABSTRACT:
A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 3.times.10.sup.16 Cu atoms/cc impurity, comprising: preparing a saturated liquid solution of Si in a Cu/Al solvent at about 20 to about 40 at. % Si at a temperature range of about 850.degree. to about 1100.degree. C. in an inert gas; immersing or partially immersing a substrate in the saturated liquid solution; super saturating the solution by lowering the temperature of the saturated solution; holding the substrate in the saturated solution for a period of time sufficient to cause Si to precipitate out of solution and form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution.

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patent: 4822585 (1989-04-01), Dawless
Ciszek et al, "Si Thin Layer Growth From Metal Solution on Single-Crystal and Cast . . . ", Twenty third IEEE Photovoltaic Specialists Con 1993 pp. 65-72 abs only.

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