Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Reexamination Certificate
2006-03-14
2006-03-14
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
C117S201000, C117S202000, C117S203000, C372S022000, C430S005000
Reexamination Certificate
active
07011709
ABSTRACT:
A crystallization apparatus includes an illumination optical system to illuminate a phase shift mask and which irradiates an amorphous semiconductor film with a light beam having an intensity distribution of an inverse peak type having a smallest light intensity in a point corresponding to a phase shift portion of the phase shift mask to generate a crystallized semiconductor film. A convergence/divergence element is disposed on a light path between the illumination optical system and phase shift mask. The convergence/divergence element converts the light beam supplied from the illumination optical system into a light beam having an upward concave intensity distribution in which the light intensity is lowest in the phase shift portion and in which the light intensity increases as distant from the phase shift portion to irradiate the phase shift mask.
REFERENCES:
patent: 6734635 (2004-05-01), Kunii et al.
patent: 6746942 (2004-06-01), Sato et al.
patent: 2002/0104750 (2002-08-01), Ito
patent: 2003/0099264 (2003-05-01), Dantus et al.
patent: 2003/0231663 (2003-12-01), Ohtsuki et al.
patent: 2004/0005744 (2004-01-01), Taniguchi et al.
patent: 2004/0036969 (2004-02-01), Taniguchi et al.
patent: 2004/0061149 (2004-04-01), Jyumonji et al.
patent: 2004/0126674 (2004-07-01), Taniguchi et al.
patent: 2004/0142544 (2004-07-01), Kimura et al.
patent: 2004/0161913 (2004-08-01), Kawasaki et al.
patent: 2004/0266080 (2004-12-01), Jyumonji et al.
W. Yeh, et al., Jpn. J. Appl. Phys., vol. 41, part 1, No. 4A, pp. 1909-1914, “Proposed Sample Structure for Marked Enlargement of Excimer-Laser-Induced Lateral Grain Growth in Si Thin Films”, Apr. 2002.
M. Nakata, et al., Jpn. J. Appl. Phys., vol. 40, part 1, No. 5A, pp. 3049-3054, “A New Nucleation-Sit-Control Excimer-Laser-Crystallization Method”, May 2001.
C.- H. Oh, et al., Jpn. J. Appl. Phys., vol. 37, part 2, No. 5A, pp. L492-L495, “A Novel Phase-Modulated Excimer-Laser Crystallization Method of Silicon Thin Films”, May 1998.
M. Matsumura, et al., Thin Solid Films 337, pp. 123-128, “Advnced Excimer-Laser Annealing Process for Quasi Single-Crystal Silicon Thin-Film Devices”, 1999.
M. Matsumura, Applied Physics, vol. 71, No. 5, pp. 543-547, “Excimer-Laser-Grown Silicon Thin Films With Ultralarge Grains”, 2002.
Masakiyo Matsumura, “Preparation of Ultra-Large Grain Silicon Thin-Films by Excimer-Laser”, Surface Science, vol. 21, No. 5, pp. 278-287, 2000.
2000-306859, published Nov. 2, 2000.
M. Nakata, et al., “Two-Dimensionally Position-Controlled Ultra-Large Grain Growth Based on Phase-Modulated Excimer-Laser Annealing Method”, Department of Physical Electronics, Tokyo Institute of Technology, Electrochemical Society Proceedings, vol. 2000-31, pp. 148-154.
Wen-Chang Yeh, et al., “Effects of a Low-Melting-Point Underlayer on Excimer-Laser-Induced Lateral Crystallization of Si Thin-Films”, Jpn. J. Appl. Phys. vol. 40 (2001), Part 1,No. 5A, May 2001, pp. 3096-3100.
Y. Sano, et al., “Highly Packed and Ultra-Large Si Grains Grown by a Single-Shot Irradiation of Excimer-Laser Light Pulse”, Department of Physical Electronics, Tokyo Institute of Technology, (8 pages).
Jyumonji Masayuki
Kimura Yoshinobu
Matsumura Masakiyo
Nishitani Mikihiko
Taniguchi Yukio
Advanced LCD Technologies Development Center Co. Ltd.
Kunemund Robert
LandOfFree
Crystallization apparatus, optical member for use in... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Crystallization apparatus, optical member for use in..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Crystallization apparatus, optical member for use in... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3581043