Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2011-03-01
2011-03-01
Souw, Bernard E (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492100, C250S492200, C250S492230, C117S092000, C117S103000, C359S619000, C359S624000, C359S626000
Reexamination Certificate
active
07897946
ABSTRACT:
A crystallization apparatus includes a light modulation element, and an image forming optical system that forms a light intensity distribution set based on light transmitted through the light modulation element on an irradiation surface. The crystallization apparatus irradiates a non-single crystal semiconductor film with light having the light intensity distribution to generate a crystallized semiconductor film. A curvature radius of at least one isointensity line of a light intensity substantially varies along the isointensity line in the light intensity distribution on the irradiation surface, and a curvature radius of at least a part of the isointensity line has a minimum value of 0.3 μm or below.
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Azuma Kazufumi
Endo Takahiko
Kato Tomoya
Matsumura Masakiyo
Taniguchi Yukio
Advanced LCD Technologies Development Center Co. Ltd.
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Smyth Andrew
Souw Bernard E
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